Future Electronics Features the 2nd Generation High Voltage SiC MOSFETs from ROHM Semiconductor
Future Electronics has announced immediate availability of 2nd generation high voltage SiC MOSFETs from ROHM Semiconductor.
- (1888PressRelease) June 19, 2014 - Pointe Claire, Quebec Future Electronics, a global leading distributor of electronic components, features the 2nd generation high voltage SiC MOSFETs from ROHM Semiconductor.
ROHM offers an expanded lineup of high voltage SiC MOSFETs designed to deliver cost effective, breakthrough performance in inverters and converters in power conditioners and other devices through high voltage resistance, low ON resistance, high speed switching, and fast recovery characteristics.
ROHM's latest SiC MOSFETs series features dramatically lower switching loss - as much as 90% compared with silicon IGBTs - due to the absence of tail current and fast recovery characteristics of the body diode. The resulting 70-90ns turn ON/OFF times allow for switching frequencies in the hundreds of kilohertz (kHz) range, making it possible to reduce the size and weight of passives while enabling designers to achieve higher efficiency systems by implementing simpler, less expensive cooling systems, for example by using smaller, lighter passive air-cooled heat sinks instead of liquid or forced-air thermal management.
ROHM has also succeeded in overcoming problems associated with characteristics deterioration due to body diode degradation during reverse conduction (i.e. increased ON resistance, forward voltage, and resistance deterioration) and premature failure of the gate oxide film by improving processes related to crystal defects and device structure, reducing ON resistance per unit area by about 30% over conventional products.
In addition to the standard lineup, ROHM offers the popular SCH2080KE - the industry's first SiC MOSFET to co-package a discrete anti-parallel SiC Schottky barrier diode, featuring a forward voltage three times smaller than that of the body diode. This minimizes power loss (by 70% or more) while saving valuable board space, simplifying layout, and reducing BOM costs compared to equivalent discrete solutions.
The combination of excellent switching performance, low ON resistance, and high breakdown voltage make ROHM SiC MOSFETs ideal replacements for silicon power MOSFETs and IGBTs in a wide range of applications, including solar and 3-phase inverters, DC/DC converters, uninterruptible power supplies (UPS), and motor drives.
Applications include DC/DC converters, solar power inverters, 3-phase inverters, power conditioners, uninterruptible power supplies (UPS), inverters for EVs and HEVs, AC inverters, and industrial equipment.
For more information about Rohm Semiconductor, DC/DC Converters, SCT2280KE, SCT2080KE, SiC Mosfets, or SiC SBD, as well as access to the world's largest available-to-sell inventory, visit www.FutureElectronics.com.
About Future Electronics
Future Electronics is a global leader in electronics distribution, ranking 3rd in component sales worldwide, with an impressive reputation for developing efficient, comprehensive global supply chain solutions. Founded in 1968, the company has established itself as one of the most innovative organizations in the industry today, with 5,000 employees in 169 offices in 44 countries around the world. Future Electronics is globally integrated, with one worldwide IT infrastructure providing real-time inventory availability and access, while enabling full integration of its operations, sales and marketing worldwide. Offering the highest level of service, the most advanced engineering capabilities and technical solutions through all stages of the design-production cycle, and the largest available-to-sell inventory in the world, Future's mission is always to Delight the Customer®. For more information, visit www.FutureElectronics.com.
Media Contact
Martin H. Gordon
Director, Corporate Communications
FUTURE ELECTRONICS
www.FutureElectronics.com
514-694-7710 (ext. 2236)
Fax: 514-630-2671
martin.gordon ( @ ) FutureElectronics dot com
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